MEMS

Mechanical properties of a 3C-SiC film between room temperature and 600°C

Silicon carbide (SiC) is widely recognized as the leading candidate to replace silicon in micro-electro-mechanical systems devices operating in harsh environments. In this work, cantilevers and bridges in SiC are designed, fabricated and evaluated …

Design, fabrication, and testing of 3C-SiC sensors for high temperature applications

Mechanical Properties of Polycrystalline 3C-SiC Films between Room Temperature and 600 °C

Silicon carbide (SiC) is widely recognised as the leading candidate to replace silicon inMicro ElectroMechanicalSystems (MEMS) operating in harsh environments. In thiswork, cantilevers and bridges in polySiCare designed, fabricated and evaluated …

Mechanical properties of poly crystalline 3C-SiC heteroepitaxial layers

Silicon carbide (SiC) is widely recognised as the leading candidate to replace silicon in Micro Electro-Mechanical Systems (MEMS) devices operating in harsh environments. In this work, cantilevers and bridges in SiC are designed, fabricated and …