Silicon carbide (SiC) is widely recognised as the leading candidate to replace silicon in Micro Electro-Mechanical Systems (MEMS) devices operating in harsh environments. In this work, cantilevers and bridges in SiC are designed, fabricated and evaluated between room temperature (RT) and 600 oC. The active material is a cubic poly SiC layer deposited on a poly-Si layer which is separated from the Si substrate by a thermal oxide. The structures are excited either mechanically or electrostatically. Their resonance frequency is measured by Laser Doppler Velocimetry and used to derive the Young’s modulus and residual stress in the heteroepitaxial layer (330±45 GPa and 200±20MPa, respectively). The temperature coefficient of Young’s modulus is found to be -53±2 ppm/K in the range RT to ~300°C, whilst an analytical expression is given for the temperature dependency of the Young’s modulus between RT and 500°C.